STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBT
STMicroelectronics STGWA30IH160DF2 1600V IH2 series IGBT was created by implementing an advanced proprietary trench gate field-stop structure. The performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low forward voltage drop is included. The STMicro STGWA30IH160DF2 is specifically designed to maximize efficiency for any resonant and soft-switching applications. The device is available in a TO-247 long lead package.
Features
- Designed for soft-commutation
- TJ = 175°C maximum junction temperature
- VCE(sat) = 1.77V (typ.) at IC = 30A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Very low drop and soft recovery co-packaged diode
- Positive VCE(sat) temperature coefficient
- TO-247 long lead package
Applications
- Induction heating
- Microwave ovens
- Resonant converters
Associated IGBTs
STMicroelectronics IGBT à arrêt de champ et grille en tranchée série 1 200 V H
IGBT haut débit à durée de tenue au court-circuit de 5 µs minimum à TJ=150 °C
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The newest technologies in Power MOSFETs and IGBTs.
Typical Application
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Publié le: 2025-05-15
| Mis à jour le: 2025-05-22